IXTP12N65X2M

IXYS
747-IXTP12N65X2M
IXTP12N65X2M

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 650V 12A N-CH X2CLASS

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Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
27 Semanas Tiempo estimado de producción de fábrica.
Se establece un tiempo de entrega prolongado para este producto.
Mínimo: 1   Múltiples: 1
Precio unitario:
₡-
Precio ext.:
₡-
Est. Tarifa:

Precio (CRC)

Cantidad Precio unitario
Precio ext.
₡2 981 ₡2 981
₡1 984 ₡19 840
₡1 380 ₡138 000
₡1 253 ₡626 500

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
12 A
300 mOhms
- 30 V, 30 V
2.5 V
- 55 C
+ 150 C
40 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: KR
Tiempo de caída: 16 ns
Transconductancia hacia delante - Mín.: 6.6 S
Tipo de producto: MOSFETs
Tiempo de subida: 24 ns
Cantidad de empaque de fábrica: 50
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 52 ns
Tiempo típico de demora de encendido: 23 ns
Peso de la unidad: 2 g
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

PCN

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

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Off-Highway Electric Vehicle Solutions

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